ds18004 rev. 23 - 2 1 of 3 bzt52c2v0 - bzt52c39 www.diodes.com diodes incorporated planar die construction 500mw power dissipation on ceramic pcb general purpose, medium current ideally suited for automated assembly processes available in lead free/rohs compliant version (note 3) maximum ratings @ t a = 25 c unless otherwise specified characteristic symbol value unit forward voltage (note 2) @ i f = 10ma v f 0.9 v power dissipation (note 1) p d 500 mw thermal resistance, junction to ambient air (note 1) r ja 250 c/w operating and storage temperature range t j, t stg -65 to +150 c notes: 1. device mounted on ceramic pcb; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm 2 . 2. short duration test pulse used to minimize self-heating effect. 3. no purposefully added lead. mechanical data bzt52c2v0 - bzt52c39 surface mount zener diode a b c d e g h j sod-123 dim min max a 3.55 3.85 b 2.55 2.85 c 1.40 1.70 d ? 1.35 e 0.55 typical g 0.25 ? h 0.11 typical j ? 0.10 0 8 all dimensions in mm case: sod-123 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish annealed over alloy 42 leadframe). please see ordering information, note 6, on page 2 polarity: cathode band marking: see below weight: 0.01 grams (approx.) marking information xx ym xx = product type marking code (see page 2) ym = date code marking y = year (ex: n = 2002) m = month (ex: 9 = september) date code key month jan feb march apr may jun jul aug sep oct nov dec code 1234 567 89 o nd year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw features
ds18004 rev. 23 - 2 2 of 3 bzt52c2v0 - bzt52c39 www.diodes.com type number (note 6) marking codes zener voltage range (note 2) maximum zener impedance (note 4) maximum reverse current (note 2) typical temperature coefficient @i ztc mv/ c test current i ztc v z @ i zt i zt z zt @i zt z zk @i zk i zk i r @ v r nom (v) min (v) max (v) ma ma ua v min max ma bzt52c2v0 wy, w y 2.0 1.91 2.09 5 100 600 1.0 150 1.0 -3.5 0 5 bzt52c2v4 wx, w x 2.4 2.2 2.6 5 100 600 1.0 50 1.0 -3.5 0 5 bzt52c2v7 w1, w 1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 bzt52c3v0 w2, w 2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 bzt52c3v3 w3, w 3 3.3 3.1 3.5 5 95 600 1.0 5.0 1.0 -3.5 0 5 bzt52c3v6 w4, w 4 3.6 3.4 3.8 5 90 600 1.0 5.0 1.0 -3.5 0 5 bzt52c3v9 w5, w 5 3.9 3.7 4.1 5 90 600 1.0 3.0 1.0 -3.5 0 5 bzt52c4v3 w6, w 6 4.3 4.0 4.6 5 90 600 1.0 3.0 1.0 -3.5 0 5 bzt52c4v7 w7, w 7 4.7 4.4 5.0 5 80 500 1.0 3.0 2.0 -3.5 0.2 5 bzt52c5v1 w8, w 8 5.1 4.8 5.4 5 60 480 1.0 2.0 2.0 -2.7 1.2 5 bzt52c5v6 w9, w 9 5.6 5.2 6.0 5 40 400 1.0 1.0 2.0 -2 2.5 5 bzt52c6v2 wa, w a 6.2 5.8 6.6 5 10 150 1.0 3.0 4.0 0.4 3.7 5 bzt52c6v8 wb, w b 6.8 6.4 7.2 5 15 80 1.0 2.0 4.0 1.2 4.5 5 bzt52c7v5 wc, w c 7.5 7.0 7.9 5 15 80 1.0 1.0 5.0 2.5 5.3 5 bzt52c8v2 wd, w d 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 bzt52c9v1 we, w e 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 bzt52c10 wf, w f 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 bzt52c11 wg, w g 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 bzt52c12 wh, w h 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 bzt52c13 wi, w i 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 bzt52c15 wj, w j 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 bzt52c16 wk, w k 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 bzt52c18 wl, w l 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 bzt52c20 wm, w m 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 bzt52c22 wn, w n 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 bzt52c24 wo, w o 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 bzt52c27 wp, w p 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 bzt52c30 wq, w q 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 bzt52c33 wr, w r 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 bzt52c36 ws, w s 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 bzt52c39 wt, w t 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 electrical characteristics @ t a = 25 c unless otherwise specified notes: 1. device mounted on ceramic pcb; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm 2 . 2. short duration test pulse used to minimize self-heating effect. 3. no purposefully added lead. 4. f = 1khz. ordering information (note 5 & 6) device packaging shipping (type number)-7* sod-123 3000/tape & reel * add ?-7? to the appropriate type number in table 1 above example: 6.2v zener = bzt52c6v2-7. notes: 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 6. for lead free/rohs compliant version part number, please add ?-f? suffix to the part number above. example: bzt52c2v0-7-f.
ds18004 rev. 23 - 2 3 of 3 bzt52c2v0 - bzt52c39 www.diodes.com 0 0.1 0.2 0.3 0.4 0.5 25 050 75 100 125 150 p,p o wer dissipati o n (w) d t , ambient temperature ( c) fig. 1 power dissipation vs ambient temperature a 0.6 0 10 20 30 40 50 01 2 3 4 5 6 7 8910 i , zener c urrent (ma) z v , zener voltage (v) fig. 2 zener breakdown characteristics z t = 25c j c2v7 c3v3 c3v9 c4v7 c5v6 c6v8 c8v2 c6v2 test current i 5.0ma z 0 10 20 30 0 i , zener current (ma) z v , zener voltage (v) fi g . 3 zener breakdown characteristics z 10 20 30 40 t = 25c j test current i 5ma z test current i 2ma z c10 c12 c18 c22 c27 c33 c36 c15 0 2 4 6 8 10 10 20 30 40 50 60 70 80 90 100 i , zener current (ma) z v , zener voltage (v) fi g . 4 zener breakdown characteristics z test current i 2ma z c39 t=25c j c , total capacitance (pf) t 10 100 1000 10 100 1 v , nominal zener voltage (v) fig. 5 total capacitance vs nominal zener voltage z t=25c f=1mhz j v=1v r v=2v r v=1v r v=2v r
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